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dc.contributor.authorChang, Hsiu-Chengen_US
dc.contributor.authorChiang, Ming-Hsiuen_US
dc.contributor.authorTsai, Tsung-Cheen_US
dc.contributor.authorChen, Tsung-Hanen_US
dc.contributor.authorWhang, Wha-Tzongen_US
dc.contributor.authorChen, Chun-Huaen_US
dc.date.accessioned2015-07-21T11:20:35Z-
dc.date.available2015-07-21T11:20:35Z-
dc.date.issued2014-01-01en_US
dc.identifier.issn2040-3364en_US
dc.identifier.urihttp://dx.doi.org/10.1039/c4nr02765een_US
dc.identifier.urihttp://hdl.handle.net/11536/123997-
dc.description.abstractWe describe an innovative concept and facile approach in fabricating laterally assembled Ga2Te3/Te binary nanocomposite films, which comprise two-dimensional quasi-periodic Ga2Te3 nanoassemblies surrounded by interlocking highly-conductive Te single crystals for comprehensively establishing subnanoto micro-scaled multi-style versatile interfaces. The distinct Ga2Te3/Te nanocomposite film exhibits a power factor that is about 60 times higher than the reported conventional Ga2Te3 and Te materials, mainly due to the 2- to 3-order improved electrical conductivity and the comparable Seebeck coefficient.en_US
dc.language.isoen_USen_US
dc.titleSmart assembling of multi-scaled functional interfaces in thermoelectric Ga2Te3/Te hetero-nanocompositesen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c4nr02765een_US
dc.identifier.journalNANOSCALEen_US
dc.citation.issue23en_US
dc.citation.spage14280en_US
dc.citation.epage14288en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000344997600027en_US
dc.citation.woscount1en_US
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