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dc.contributor.authorLiu, Chung-Weien_US
dc.contributor.authorChang, Shoou-Jinnen_US
dc.contributor.authorHo, Yen-Tengen_US
dc.contributor.authorChang, Lien_US
dc.contributor.authorLo, Kuang-Yaoen_US
dc.contributor.authorBrahma, Sanjayaen_US
dc.date.accessioned2015-07-21T08:27:55Z-
dc.date.available2015-07-21T08:27:55Z-
dc.date.issued2014-01-01en_US
dc.identifier.issn1573-4137en_US
dc.identifier.urihttp://hdl.handle.net/11536/124006-
dc.description.abstractThe planar defects such as basal stacking faults (BSFs) are probed on m-plane ZnO grown on LaAlO3(112) substrate by reflective second harmonic generation (RSHG). The BSFs result in nonvanishing single-direction dipoles that behave similar to a mirror-like symmetrical dipole. The RSHG pattern from m-plane ZnO comprised of not only the bulk dipole contribution of ZnO but also an additional mirror-like symmetrical dipole contribution from BSF defects. Transmission electron microscopy image displays the presence of BSFs that lie in the c-plane of ZnO and agrees well with RSHG results. Planar BSFs are formed due to the anisotropic stress relaxation between m-plane ZnO film and LaAlO3(112) substrate, resulting in higher-quality m-plane ZnO films.en_US
dc.language.isoen_USen_US
dc.subjectBasal stacking faulten_US
dc.subjectnon-polar planeen_US
dc.subjectsecond harmonic generationen_US
dc.subjectZnOen_US
dc.titleSymmetrical Dipole Contribution from Planar Defects on m-plane ZnO Epitaxial Filmsen_US
dc.typeArticleen_US
dc.identifier.journalCURRENT NANOSCIENCEen_US
dc.citation.volume10en_US
dc.citation.spage883en_US
dc.citation.epage888en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000344004400015en_US
dc.citation.woscount0en_US
Appears in Collections:Articles