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dc.contributor.authorIsmail, Muhammaden_US
dc.contributor.authorRana, Anwar Manzooren_US
dc.contributor.authorTalib, Ijazen_US
dc.contributor.authorTsai, Tsung-Lingen_US
dc.contributor.authorChand, Umeshen_US
dc.contributor.authorAhmed, Ejazen_US
dc.contributor.authorNadeem, Muhammad Younusen_US
dc.contributor.authorAziz, Abdulen_US
dc.contributor.authorShah, Nazar Abbasen_US
dc.contributor.authorHussain, Muhammaden_US
dc.date.accessioned2015-07-21T08:28:49Z-
dc.date.available2015-07-21T08:28:49Z-
dc.date.issued2015-01-01en_US
dc.identifier.issn0038-1098en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.ssc.2014.10.019en_US
dc.identifier.urihttp://hdl.handle.net/11536/124050-
dc.description.abstractFully transparent resistive random access memory (TRRAM) device based on Ce02 as active layer using indium-tin-oxide (ITO) electrodes was fabricated on glass substrate. The ITO/CeO2/ITO memory device shows 81% transmission of visible light, optical band gap energy of 4.05 eV, and exhibits reliable bipolar resistive switching behavior. X-ray diffraction of CeO2 thin films demonstrated a weak polycrystalline phase. The low field conduction is dominated by Ohmic type while Poole-Frenkel effect is responsible for conduction in the high field region. The device reliability investigations, such as data retention (over 10(4) s) under applied stress and endurance tests conducted at room temperature and 85 degrees C show potential of our TRRAM devices for future non-volatile memory applications. (C) 2014 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectResistive switchingen_US
dc.subjectThin filmsen_US
dc.subjectSandwichen_US
dc.subjectMetalen_US
dc.subjectPoole-Frenkel conductionen_US
dc.titleRoom-temperature fabricated, fully transparent resistive memory based on ITO/CeO2/ITO structure for RRAM applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.ssc.2014.10.019en_US
dc.identifier.journalSOLID STATE COMMUNICATIONSen_US
dc.citation.volume202en_US
dc.citation.spage28en_US
dc.citation.epage34en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000346760200006en_US
dc.citation.woscount2en_US
Appears in Collections:Articles