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dc.contributor.authorLiu, Hsiang-Linen_US
dc.contributor.authorSiregar, Syahrilen_US
dc.contributor.authorHasdeo, Eddwi H.en_US
dc.contributor.authorKumamoto, Yasuakien_US
dc.contributor.authorShen, Chih-Chiangen_US
dc.contributor.authorCheng, Chia-Chinen_US
dc.contributor.authorLi, Lain-Jongen_US
dc.contributor.authorSaito, Riichiroen_US
dc.contributor.authorKawata, Satoshien_US
dc.date.accessioned2015-07-21T08:28:16Z-
dc.date.available2015-07-21T08:28:16Z-
dc.date.issued2015-01-01en_US
dc.identifier.issn0008-6223en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.carbon.2014.10.028en_US
dc.identifier.urihttp://hdl.handle.net/11536/124063-
dc.description.abstractWe present joint experimental and theoretical investigations of the deep-ultraviolet Raman scattering spectra of monolayer graphene thin films. We found that upon a 266 nm laser excitation, while the G mode remains pronounced, the G\' mode is not observed. The G\' mode exhibits distinctive linewidth broadening towards the ultraviolet frequency region. The peak intensity ratio of the G\' and G modes increases dramatically excited at 355, 532, and 785 nm wavelengths. All of the experimental findings are in good agreement with the theory calculated by the tight-binding method. We theoretically show that the integrated intensity of the G\' mode is inversely proportional to the incident photon energy, whereas that of the G mode increases as the fourth power of the incident photon energy. These results extend our understanding of the double resonance Raman scattering process of graphene away from the Dirac cones and provide the foundation for future technologically important developments of graphene in the deep-ultraviolet frequency range. (C) 2014 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleDeep-ultraviolet Raman scattering studies of monolayer graphene thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.carbon.2014.10.028en_US
dc.identifier.journalCARBONen_US
dc.citation.volume81en_US
dc.citation.spage807en_US
dc.citation.epage813en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000345682900086en_US
dc.citation.woscount0en_US
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