Temperature-dependent carrier-phonon coupling in topological insulator Bi2Se3

doi:10.1063/1.4904009

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DC 欄位	值	語言
dc.contributor.author	Lai, Yi-Ping	en_US
dc.contributor.author	Chen, Hsueh-Ju	en_US
dc.contributor.author	Wu, Kuang-Hsiung	en_US
dc.contributor.author	Liu, Jia-Ming	en_US
dc.date.accessioned	2015-07-21T11:21:01Z	-
dc.date.available	2015-07-21T11:21:01Z	-
dc.date.issued	2014-12-08	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.4904009	en_US
dc.identifier.uri	http://hdl.handle.net/11536/124076	-
dc.description.abstract	Temperature-dependent (11.0K +/- 294.5 K) carrier-phonon coupling in Bi2Se3 is investigated by ultrafast pump-probe spectroscopy. The rise time of the differential reflectivity is interpreted by a combined effect of electron temperature relaxation and hot-phonon lifetime. The electron-phonon coupling constant of the bulk state (lambda = 0.63 +/- 0.05) is deduced from theoretical fitting. Increasing hot-phonon lifetime with decreasing temperature is attributed to a decreasing phonon-phonon collision rate. A complete analysis of the thermalization process is presented. Understanding carrier and phonon dynamics is essential for future optoelectronic and spintronic applications of topological insulators. (C) 2014 AIP Publishing LLC.	en_US
dc.language.iso	en_US	en_US
dc.title	Temperature-dependent carrier-phonon coupling in topological insulator Bi2Se3	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.4904009	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	105	en_US
dc.citation.issue	23	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000346266000052	en_US
dc.citation.woscount	0	en_US
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