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dc.contributor.authorLin, Pei-Yinen_US
dc.contributor.authorChen, Jr-Yuen_US
dc.contributor.authorShih, Yi-Senen_US
dc.contributor.authorChang, Lien_US
dc.date.accessioned2015-07-21T11:20:34Z-
dc.date.available2015-07-21T11:20:34Z-
dc.date.issued2014-11-23en_US
dc.identifier.issn1556-276Xen_US
dc.identifier.urihttp://dx.doi.org/10.1186/1556-276X-9-628en_US
dc.identifier.urihttp://hdl.handle.net/11536/124123-
dc.description.abstractThe attractive prospect for AlInN/GaN-based devices for high electron mobility transistors with advanced structure relies on high-quality AlInN epilayer. In this work, we demonstrate the growth of high-quality Al-rich AlInN films deposited on c-plane GaN substrate by metal-organic chemical vapor deposition. X-ray diffraction, scanning electron microscopy, and scanning transmission electron microscopy show that the films lattice-matched with GaN can have a very smooth surface with good crystallinity and uniform distribution of Al and In in AlInN.en_US
dc.language.isoen_USen_US
dc.subjectMetal-organic chemical vapor depositionen_US
dc.subjectEpitaxyen_US
dc.subjectAlInNen_US
dc.subjectGaNen_US
dc.titleStructural properties of Al-rich AlInN grown on c-plane GaN substrate by metal-organic chemical vapor depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1186/1556-276X-9-628en_US
dc.identifier.journalNANOSCALE RESEARCH LETTERSen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000345970500001en_US
dc.citation.woscount0en_US
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