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dc.contributor.authorLu, Fang-Hsienen_US
dc.contributor.authorMohamed, Mohamed-Gamalen_US
dc.contributor.authorLiu, Tzeng-Fengen_US
dc.contributor.authorChao, Chuen-Guangen_US
dc.contributor.authorDai, Lizongen_US
dc.contributor.authorKuo, Shiao-Weien_US
dc.date.accessioned2015-07-21T11:20:55Z-
dc.date.available2015-07-21T11:20:55Z-
dc.date.issued2014-01-01en_US
dc.identifier.issn2046-2069en_US
dc.identifier.urihttp://dx.doi.org/10.1039/c4ra14371jen_US
dc.identifier.urihttp://hdl.handle.net/11536/124167-
dc.description.abstractIn this study we developed a simple quenching method to fabricate metal oxide (CuO, ZnO, TiO2, Fe(OH) 3)polythiophene (PT) composites. By varying the metal oxide, PT, and rate of crystallization, we could control the fiber morphology in these composites. Four-probe-station analyses revealed that the conductivities of these metal oxide-PT composites ranged from 10(-5) to 10(-3) S cm(-1), higher than that of any species of metal oxide alone (from 10(-10) to 10(-7) S cm(-1)), because the fiber morphology behaved as an exceptional transmission factor for electrons. Moreover, these metal oxide-PT composites exhibited the characteristics of colloids, as well as high viscosity, suggesting that they could also be applied as coatings on silicon and glass substrates, and could provide the opportunity to form useful materials for large-scale gas sensors due to good flexibility and porosity. UV-vis spectroscopic analyses revealed variations in the energy level (>3.37 eV for ZnO) and confirmed the mechanism of the morphology change of the composite.en_US
dc.language.isoen_USen_US
dc.titleA quenching method for the preparation of metal oxide-polythiophene composites having fiber structuresen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c4ra14371jen_US
dc.identifier.journalRSC ADVANCESen_US
dc.citation.issue110en_US
dc.citation.spage64525en_US
dc.citation.epage64534en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000345826100017en_US
dc.citation.woscount0en_US
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