完整後設資料紀錄
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dc.contributor.authorKuo, SYen_US
dc.contributor.authorLai, FIen_US
dc.contributor.authorChen, WCen_US
dc.contributor.authorCheng, CPen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorWang, SCen_US
dc.date.accessioned2014-12-08T15:16:57Z-
dc.date.available2014-12-08T15:16:57Z-
dc.date.issued2006-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.45.3662en_US
dc.identifier.urihttp://hdl.handle.net/11536/12417-
dc.description.abstractThe effect of post-annealing on sol-gel-derived ZnO films has been investigated. For these films, structural investigations including analyses of surface morphology and microstructures were carried out by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). Also, optical properties were determined by photoluminescence analysis, ellipsometry and optical pumping measurement. The XRD results indicate that the (002) peak will predominate with increasing annealing temperature. SEM images show that grain size increased with annealing temperature. Moreover, photoluminescence spectra revealed the enhancement in UV emission intensity with annealing temperature, which was attributed to an improvement in crystal quality. Room-temperature ultraviolet random lasing action was observed in the ZnO films. The threshold intensity for the lasing was estimated to be similar to 70 kW/cm(2). Furthermore, it was found that the formation of random laser action is affected by post-annealing, which is associated to the presence of a high-gain medium and efficient light scattering.en_US
dc.language.isoen_USen_US
dc.subjectzinc oxideen_US
dc.subjectUV lasingen_US
dc.subjectsol-gelen_US
dc.titleUltraviolet lasing of sol-gel-derived zinc oxide polycrystalline filmsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.45.3662en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume45en_US
dc.citation.issue4Ben_US
dc.citation.spage3662en_US
dc.citation.epage3665en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000237570600163-
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