完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Kuo, SY | en_US |
dc.contributor.author | Lai, FI | en_US |
dc.contributor.author | Chen, WC | en_US |
dc.contributor.author | Cheng, CP | en_US |
dc.contributor.author | Kuo, HC | en_US |
dc.contributor.author | Wang, SC | en_US |
dc.date.accessioned | 2014-12-08T15:16:57Z | - |
dc.date.available | 2014-12-08T15:16:57Z | - |
dc.date.issued | 2006-04-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.45.3662 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/12417 | - |
dc.description.abstract | The effect of post-annealing on sol-gel-derived ZnO films has been investigated. For these films, structural investigations including analyses of surface morphology and microstructures were carried out by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). Also, optical properties were determined by photoluminescence analysis, ellipsometry and optical pumping measurement. The XRD results indicate that the (002) peak will predominate with increasing annealing temperature. SEM images show that grain size increased with annealing temperature. Moreover, photoluminescence spectra revealed the enhancement in UV emission intensity with annealing temperature, which was attributed to an improvement in crystal quality. Room-temperature ultraviolet random lasing action was observed in the ZnO films. The threshold intensity for the lasing was estimated to be similar to 70 kW/cm(2). Furthermore, it was found that the formation of random laser action is affected by post-annealing, which is associated to the presence of a high-gain medium and efficient light scattering. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | zinc oxide | en_US |
dc.subject | UV lasing | en_US |
dc.subject | sol-gel | en_US |
dc.title | Ultraviolet lasing of sol-gel-derived zinc oxide polycrystalline films | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1143/JJAP.45.3662 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | en_US |
dc.citation.volume | 45 | en_US |
dc.citation.issue | 4B | en_US |
dc.citation.spage | 3662 | en_US |
dc.citation.epage | 3665 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000237570600163 | - |
顯示於類別: | 會議論文 |