標題: | Novel method of converting metallic-type carbon nanotubes to semiconducting-type carbon nanotube field-effect transistors |
作者: | Chen, Bae-Horng Wei, Jeng-Hua Lo, Po-Yuan Pei, Zing-Way Chao, Tien-Sheng Lin, Horng-Chin Huang, Tiao-Yuan 電子物理學系 電子工程學系及電子研究所 Department of Electrophysics Department of Electronics Engineering and Institute of Electronics |
關鍵字: | single-walled carbon nanotubes (SWNTs);chirality;metallic type;semiconducting type;ion bombardment |
公開日期: | 1-四月-2006 |
摘要: | Depending on the chirality, single-walled carbon nanotubes (SWNTs) can be either metallic or semiconducting. Thus far, the production of SWNTs, irrespective of synthesis methods, still yields a mixture of both types, with the metallic type being prevalent. However, semiconducting-type SWNTs are needed for carbon nanotube field-effect transistors (CNT-FETs) as well as many sensors. This is because only the semiconducting-type SWNTs can be effectively modulated by the gate voltage. In contrast, the lack of field effect in metallic-type SWNTs adversely impacts their applications in high-performance electronic devices. In this study, we demonstrate for the first time a novel plasma treatment method that allows us to convert metallic-type carbon nanotubes to semi conducting-type CNT-FETs. On the basis of our experimental results, we believe that the ion bombardment during Ar plasma treatment attacks both metallic- and semiconducting-type nanotubes; however, the metallic-type carbon nanotubes are more vulnerable to the attack than those of the semiconducting type, and are subsequently transformed into the latter type. |
URI: | http://dx.doi.org/10.1143/JJAP.45.3680 http://hdl.handle.net/11536/12418 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.45.3680 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS |
Volume: | 45 |
Issue: | 4B |
起始頁: | 3680 |
結束頁: | 3685 |
顯示於類別: | 會議論文 |