標題: Using nanoindentation and cathodoluminescence to investigate the residual stress of ZnSe
作者: Wen, Hua-Chiang
Chou, Wu-Ching
Yau, Wei-Hung
Fan, Wen-Chung
Lee, Ling
Jian, Kun-Feng
電子物理學系
Department of Electrophysics
關鍵字: ZnSe;Nanoindentation;Cathodoluminescence;Transmission electron microscopy
公開日期: 15-三月-2015
摘要: In this study we examined the effects of the nanoindentation-induced residual stress of single-crystalline zinc selenide (ZnSe). We employed the nanoindentation technique to evaluate the dislocation mobility of ZnSe at loading ratios of 10 and 2 mN/min, with a holding time of 120 s under a constant load. We visualized the resultant dislocation and microcracks using cathodoluminescence (CL) spectroscopy and mapping to compare the nanoindentation-induced residual stresses of the various ZnSe samples. CL mapping revealed massive dislocation activities during the loading process. The dislocations played roles as nonradiative recombination centers that quenched the local CL intensity. Transmission electron microscopy also revealed the effects of nanoindentation-induced residual stress. To obtain insight into the influence of the residual stress and to determine the dislocation mobilities for ZnSe films, it was essential to monitor the quenching effect of nonradiative recombination centers as a function of CL mapping. (C) 2014 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jallcom.2014.10.162
http://hdl.handle.net/11536/124183
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2014.10.162
期刊: JOURNAL OF ALLOYS AND COMPOUNDS
Volume: 625
起始頁: 52
結束頁: 56
顯示於類別:期刊論文