標題: Novel method of converting metallic-type carbon nanotubes to semiconducting-type carbon nanotube field-effect transistors
作者: Chen, Bae-Horng
Wei, Jeng-Hua
Lo, Po-Yuan
Pei, Zing-Way
Chao, Tien-Sheng
Lin, Horng-Chin
Huang, Tiao-Yuan
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
關鍵字: single-walled carbon nanotubes (SWNTs);chirality;metallic type;semiconducting type;ion bombardment
公開日期: 1-Apr-2006
摘要: Depending on the chirality, single-walled carbon nanotubes (SWNTs) can be either metallic or semiconducting. Thus far, the production of SWNTs, irrespective of synthesis methods, still yields a mixture of both types, with the metallic type being prevalent. However, semiconducting-type SWNTs are needed for carbon nanotube field-effect transistors (CNT-FETs) as well as many sensors. This is because only the semiconducting-type SWNTs can be effectively modulated by the gate voltage. In contrast, the lack of field effect in metallic-type SWNTs adversely impacts their applications in high-performance electronic devices. In this study, we demonstrate for the first time a novel plasma treatment method that allows us to convert metallic-type carbon nanotubes to semi conducting-type CNT-FETs. On the basis of our experimental results, we believe that the ion bombardment during Ar plasma treatment attacks both metallic- and semiconducting-type nanotubes; however, the metallic-type carbon nanotubes are more vulnerable to the attack than those of the semiconducting type, and are subsequently transformed into the latter type.
URI: http://dx.doi.org/10.1143/JJAP.45.3680
http://hdl.handle.net/11536/12418
ISSN: 0021-4922
DOI: 10.1143/JJAP.45.3680
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 45
Issue: 4B
起始頁: 3680
結束頁: 3685
Appears in Collections:Conferences Paper


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