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dc.contributor.authorChen, Bae-Horngen_US
dc.contributor.authorWei, Jeng-Huaen_US
dc.contributor.authorLo, Po-Yuanen_US
dc.contributor.authorPei, Zing-Wayen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.contributor.authorLin, Horng-Chinen_US
dc.contributor.authorHuang, Tiao-Yuanen_US
dc.date.accessioned2014-12-08T15:16:57Z-
dc.date.available2014-12-08T15:16:57Z-
dc.date.issued2006-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.45.3680en_US
dc.identifier.urihttp://hdl.handle.net/11536/12418-
dc.description.abstractDepending on the chirality, single-walled carbon nanotubes (SWNTs) can be either metallic or semiconducting. Thus far, the production of SWNTs, irrespective of synthesis methods, still yields a mixture of both types, with the metallic type being prevalent. However, semiconducting-type SWNTs are needed for carbon nanotube field-effect transistors (CNT-FETs) as well as many sensors. This is because only the semiconducting-type SWNTs can be effectively modulated by the gate voltage. In contrast, the lack of field effect in metallic-type SWNTs adversely impacts their applications in high-performance electronic devices. In this study, we demonstrate for the first time a novel plasma treatment method that allows us to convert metallic-type carbon nanotubes to semi conducting-type CNT-FETs. On the basis of our experimental results, we believe that the ion bombardment during Ar plasma treatment attacks both metallic- and semiconducting-type nanotubes; however, the metallic-type carbon nanotubes are more vulnerable to the attack than those of the semiconducting type, and are subsequently transformed into the latter type.en_US
dc.language.isoen_USen_US
dc.subjectsingle-walled carbon nanotubes (SWNTs)en_US
dc.subjectchiralityen_US
dc.subjectmetallic typeen_US
dc.subjectsemiconducting typeen_US
dc.subjection bombardmenten_US
dc.titleNovel method of converting metallic-type carbon nanotubes to semiconducting-type carbon nanotube field-effect transistorsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.45.3680en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume45en_US
dc.citation.issue4Ben_US
dc.citation.spage3680en_US
dc.citation.epage3685en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000237570600167-
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