完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Sheu, JT | en_US |
dc.contributor.author | Wu, CH | en_US |
dc.contributor.author | Chao, TS | en_US |
dc.date.accessioned | 2014-12-08T15:16:57Z | - |
dc.date.available | 2014-12-08T15:16:57Z | - |
dc.date.issued | 2006-04-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.45.3693 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/12419 | - |
dc.description.abstract | We report a novel platform to perform selective deposition of gold nanoparticles on dip-pen nanolithographic patterns on SiO2 surfaces. An "inked" atomic force microscope (AFM) tip was adopted to deposit 2.2mM organic N-(2-aminoethyl)-3aminopropyltriniethoxysilane (AEAPTMS) Molecules in nanopatterns through a water meniscus onto a SiO2, substrate under ambient conditions; the molecules act as linkers for the selective deposition of gold nanoparticles on the SiO2 surface. Conditions for dip-pen nanolithography of organic nanopatterns of AEAPTMS were investigated. In addition, gold nanoparticles with negatively-charged citrate Surfaces were deposited selectively on top of the organic patterns. X-ray photoelectron spectroscopy was then used to evaluate the presence of gold nanoparticles on the SiO2 surface. Lateral force microscopy was utilized to differentiate the surface between oxidized semiconductors and patterned areas with monolayer of AEAPTMS. Linewidths down to 60 nm have been successfully achieved by this method. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | dip-pen nanolithography | en_US |
dc.subject | AFM tip | en_US |
dc.subject | N-(2-aminoethyl)-3-aminopropyltrimethoxysilane | en_US |
dc.subject | gold nanoparticles | en_US |
dc.subject | X-ray photoelectron spectroscopy | en_US |
dc.subject | lateral force microscopy | en_US |
dc.title | Selective deposition of gold particles on dip-pen nanolithography patterns on silicon dioxide surfaces | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1143/JJAP.45.3693 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | en_US |
dc.citation.volume | 45 | en_US |
dc.citation.issue | 4B | en_US |
dc.citation.spage | 3693 | en_US |
dc.citation.epage | 3697 | en_US |
dc.contributor.department | 材料科學與工程學系奈米科技碩博班 | zh_TW |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Graduate Program of Nanotechnology , Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000237570600170 | - |
顯示於類別: | 會議論文 |