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dc.contributor.authorSheu, JTen_US
dc.contributor.authorWu, CHen_US
dc.contributor.authorChao, TSen_US
dc.date.accessioned2014-12-08T15:16:57Z-
dc.date.available2014-12-08T15:16:57Z-
dc.date.issued2006-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.45.3693en_US
dc.identifier.urihttp://hdl.handle.net/11536/12419-
dc.description.abstractWe report a novel platform to perform selective deposition of gold nanoparticles on dip-pen nanolithographic patterns on SiO2 surfaces. An "inked" atomic force microscope (AFM) tip was adopted to deposit 2.2mM organic N-(2-aminoethyl)-3aminopropyltriniethoxysilane (AEAPTMS) Molecules in nanopatterns through a water meniscus onto a SiO2, substrate under ambient conditions; the molecules act as linkers for the selective deposition of gold nanoparticles on the SiO2 surface. Conditions for dip-pen nanolithography of organic nanopatterns of AEAPTMS were investigated. In addition, gold nanoparticles with negatively-charged citrate Surfaces were deposited selectively on top of the organic patterns. X-ray photoelectron spectroscopy was then used to evaluate the presence of gold nanoparticles on the SiO2 surface. Lateral force microscopy was utilized to differentiate the surface between oxidized semiconductors and patterned areas with monolayer of AEAPTMS. Linewidths down to 60 nm have been successfully achieved by this method.en_US
dc.language.isoen_USen_US
dc.subjectdip-pen nanolithographyen_US
dc.subjectAFM tipen_US
dc.subjectN-(2-aminoethyl)-3-aminopropyltrimethoxysilaneen_US
dc.subjectgold nanoparticlesen_US
dc.subjectX-ray photoelectron spectroscopyen_US
dc.subjectlateral force microscopyen_US
dc.titleSelective deposition of gold particles on dip-pen nanolithography patterns on silicon dioxide surfacesen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.45.3693en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume45en_US
dc.citation.issue4Ben_US
dc.citation.spage3693en_US
dc.citation.epage3697en_US
dc.contributor.department材料科學與工程學系奈米科技碩博班zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentGraduate Program of Nanotechnology , Department of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000237570600170-
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