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dc.contributor.authorTsai, Tsung-Lingen_US
dc.contributor.authorHo, Tsung-Hanen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2015-07-21T08:29:17Z-
dc.date.available2015-07-21T08:29:17Z-
dc.date.issued2015-01-28en_US
dc.identifier.issn0022-3727en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0022-3727/48/3/035108en_US
dc.identifier.urihttp://hdl.handle.net/11536/124202-
dc.description.abstractThe effects of Ni/ZrO2/TaN resistive switching memory devices without and with a 400 degrees C annealing process on switching properties are investigated. The devices exhibit unipolar resistive switching behaviors with low set and reset voltages because of a large amount of Ni diffusion with no reaction with ZrO2 after the annealing process, which is confirmed by ToF-SIMS and XPS analyses. A physical model based on a Ni filament is constructed to explain such phenomena. The device that undergoes the 400 degrees C annealing process exhibits an excellent endurance of more than 1.5 x 10(4) cycles. The improvement can be attributed to the enhancement of oxygen ion migration along grain boundaries, which result in less oxygen ion consumption during the reset process. The device also performs good retention up to 10(5) s at 150 degrees C. Therefore, it has great potential for high-density nonvolatile memory applications.en_US
dc.language.isoen_USen_US
dc.subjectresistive random access memory (RRAM)en_US
dc.subjectunipolar resistive switchingen_US
dc.subjectNi diffusionen_US
dc.subjectoxygen ion consumptionen_US
dc.titleUnipolar resistive switching behaviors and mechanisms in an annealed Ni/ZrO2/TaN memory deviceen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0022-3727/48/3/035108en_US
dc.identifier.journalJOURNAL OF PHYSICS D-APPLIED PHYSICSen_US
dc.citation.volume48en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000348300700009en_US
dc.citation.woscount1en_US
Appears in Collections:Articles