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dc.contributor.authorTu-Ngoc Lamen_US
dc.contributor.authorLai, Yu-Lingen_US
dc.contributor.authorChen, Chih-Hanen_US
dc.contributor.authorChen, Po-Hungen_US
dc.contributor.authorChan, Yuet-Loyen_US
dc.contributor.authorWei, Der-Hsinen_US
dc.contributor.authorLin, Hong-Jien_US
dc.contributor.authorChen, C. T.en_US
dc.contributor.authorWang, Jeng-Hanen_US
dc.contributor.authorSheu, Jeng-Tzongen_US
dc.contributor.authorHsu, Yao-Janeen_US
dc.date.accessioned2019-04-03T06:41:44Z-
dc.date.available2019-04-03T06:41:44Z-
dc.date.issued2015-01-21en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.91.041204en_US
dc.identifier.urihttp://hdl.handle.net/11536/124204-
dc.description.abstractThe spin polarization of organic-ferromagnetic interfaces in an organic spin valve critically affects the efficiency of spin injection or detection. We examined the chemical and electronic properties of ferromagnetic Co deposited on organic Alq(3) and the interfacial spin-polarized capability of the electronic states. Our x-ray photoemission spectra and calculations with density-functional theory indicate a sequential and unequal distribution of charge from Co clusters to N and then to O atoms in Alq(3). The preferential orbital hybridization at specific functional sites produces efficient spin polarization of organic molecules. Element-specific measurements of x-ray magnetic circular dichroism demonstrate the preferential spin polarization in the lowest unoccupied molecular orbital state of N atoms at the complex interface for Co atop Alq(3), which agrees satisfactorily with calculation. Our results indicate that an induced interfacial spin polarization on engineering the dominant reaction of Co with mainly N and O atoms in Alq(3) might pave a way for effective spin filtering in organic spintronics.en_US
dc.language.isoen_USen_US
dc.titleEffectiveness of organic molecules for spin filtering in an organic spin valve: Reaction-induced spin polarization for Co atop Alq(3)en_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.91.041204en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume91en_US
dc.citation.issue4en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000348726000001en_US
dc.citation.woscount5en_US
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