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dc.contributor.authorChen, Y. F.en_US
dc.contributor.authorChang, M. T.en_US
dc.contributor.authorZhuang, W. Z.en_US
dc.contributor.authorSu, K. W.en_US
dc.contributor.authorHuang, K. F.en_US
dc.contributor.authorLiang, H. C.en_US
dc.date.accessioned2015-07-21T08:28:45Z-
dc.date.available2015-07-21T08:28:45Z-
dc.date.issued2015-01-01en_US
dc.identifier.issn1863-8880en_US
dc.identifier.urihttp://dx.doi.org/10.1002/lpor.201400132en_US
dc.identifier.urihttp://hdl.handle.net/11536/124232-
dc.description.abstractA novel scheme to multiply the repetition rate of a monolithic self-mode-locked laser for generating sub-terahertz pulse sources is successfully demonstrated. A coated Yb:KGW crystal is designed to achieve a self-mode-locked operation at a repetition rate of 24 GHz with an average output power exceeding 1.0 W at a pump power of 4.8 W. A partially reflective mirror is utilized to combine with the output surface of the gain medium to constitute an external Fabry-Perot cavity. It is theoretically and experimentally verified that adjusting the external cavity length to satisfy the commensurate condition can lead to the frequency spacing to be various order harmonics of the mode spacing of the monolithic cavity. The maximum pulse repetition rate of the laser output can be up to 216 GHz and the pulse duration is as short as 330 fs. More importantly, the overall characteristics of the first-order temporal autocorrelation traces obtained by sequentially scanning the external cavity.length display an intriguing phenomenon of temporally fractional revivals, similar to the feature of spatial Talbot revivals.en_US
dc.language.isoen_USen_US
dc.subjectsub-terahertz repetition ratesen_US
dc.subjectmode-locked laseren_US
dc.subjectFabry-Perot feedbacken_US
dc.subjectmonolithic cavityen_US
dc.titleGeneration of sub-terahertz repetition rates from a monolithic self-mode-locked laser coupled with an external Fabry-Perot cavityen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/lpor.201400132en_US
dc.identifier.journalLASER & PHOTONICS REVIEWSen_US
dc.citation.spage91en_US
dc.citation.epage97en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000348141200007en_US
dc.citation.woscount0en_US
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