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dc.contributor.authorTang, Chi-Shungen_US
dc.contributor.authorTseng, Shu-Tingen_US
dc.contributor.authorGudmundsson, Vidaren_US
dc.contributor.authorCheng, Shun-Jenen_US
dc.date.accessioned2015-07-21T08:29:11Z-
dc.date.available2015-07-21T08:29:11Z-
dc.date.issued2015-03-04en_US
dc.identifier.issn0953-8984en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0953-8984/27/8/085801en_US
dc.identifier.urihttp://hdl.handle.net/11536/124307-
dc.description.abstractWe investigate double finger gate (DFG) controlled spin-resolved resonant transport properties in an n-type quantum channel with a Rashba-Zeeman (RZ) subband energy gap. By appropriately tuning the DFG in the strong Rashba coupling regime, resonant state structures in conductance can be found that are sensitive to the length of the DFG system. Furthermore, a hole-like bound state feature below the RZ gap and an electron-like quasi-bound state feature at the threshold of the upper spin branch can be found that is insensitive to the length of the DFG system.en_US
dc.language.isoen_USen_US
dc.subjectquantum transporten_US
dc.subjectspin-orbit interactionen_US
dc.subjectRashbaen_US
dc.subjectZeemanen_US
dc.titleDouble-finger-gate controlled spin-resolved resonant quantum transport in the presence of a Rashba-Zeeman gapen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0953-8984/27/8/085801en_US
dc.identifier.journalJOURNAL OF PHYSICS-CONDENSED MATTERen_US
dc.citation.volume27en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000349605300014en_US
dc.citation.woscount0en_US
Appears in Collections:Articles