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dc.contributor.authorLee, Ya-Juen_US
dc.contributor.authorYao, Yung-Chien_US
dc.contributor.authorYang, Zu-Poen_US
dc.date.accessioned2019-04-03T06:41:37Z-
dc.date.available2019-04-03T06:41:37Z-
dc.date.issued2015-02-01en_US
dc.identifier.issn1943-0655en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JPHOT.2015.2392374en_US
dc.identifier.urihttp://hdl.handle.net/11536/124342-
dc.description.abstractWe design and numerically evaluate a new type of III-nitride n-i-p solar cells whose p-and n-type regions with equal carrier concentration of 3 x 1018 cm(-3) are not generated by extrinsic impurity doping but by the so-called polarization-induced doping, which is induced by the graded InxGa(1-x)N layers of linearly increasing (from x = 0% to 30%) and decreasing (from x = 30% to 0%) indium composition to construct the conductive p-and n-type regions, respectively. Because of the identical and uniform polarization charges within each unit cell, a smooth spatial variation of the potential profile of the device is, hence, expected, which mitigates the energy band discontinuities at heterointerfaces and facilitates transportation and collection of photogenerated carriers with high efficiency. Most importantly, as the conductive n-and p-type regions are formed by electrostatic field ionization but not by the thermal activation, the concentration of field-induced carriers is independent of thermal freeze-out effects. Thus, the polarization-induced doping III-nitride n-i-p solar cells can provide stable power conversion efficiency, even when operated at low temperatures.en_US
dc.language.isoen_USen_US
dc.subjectPolarization-induced dopingen_US
dc.subjectIII-nitrideen_US
dc.subjectn-i-p solar cellsen_US
dc.subjectwurtzite structureen_US
dc.titleNumerical Analysis on Polarization-Induced Doping III-Nitride n-i-p Solar Cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JPHOT.2015.2392374en_US
dc.identifier.journalIEEE PHOTONICS JOURNALen_US
dc.citation.volume7en_US
dc.citation.issue1en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.identifier.wosnumberWOS:000349678100016en_US
dc.citation.woscount2en_US
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