統計資料
總造訪次數
| 檢視 | |
|---|---|
| An efficient method for characterizing time-evolutional interface state and its correlation with the device degradation in LDD n-MOSFET's | 114 |
本月總瀏覽
| 七月 2025 | 八月 2025 | 九月 2025 | 十月 2025 | 十一月 2025 | 十二月 2025 | 一月 2026 | |
|---|---|---|---|---|---|---|---|
| An efficient method for characterizing time-evolutional interface state and its correlation with the device degradation in LDD n-MOSFET's | 0 | 0 | 0 | 0 | 0 | 0 | 1 |
檔案下載
| 檢視 | |
|---|---|
| A1996UM67900008.pdf | 3 |
國家瀏覽排行
| 檢視 | |
|---|---|
| 中國 | 95 |
| 美國 | 15 |
| 印度 | 2 |
縣市瀏覽排行
| 檢視 | |
|---|---|
| Shenzhen | 95 |
| Menlo Park | 9 |
| Kensington | 6 |