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dc.contributor.authorChen, Kuo-Juen_US
dc.contributor.authorLin, Chien-Chungen_US
dc.contributor.authorHan, Hau-Veien_US
dc.contributor.authorLee, Chia-Yuen_US
dc.contributor.authorChien, Shih-Hsuanen_US
dc.contributor.authorWang, Kuan-Yuen_US
dc.contributor.authorChiu, Sheng-Huanen_US
dc.contributor.authorTu, Zong-Yien_US
dc.contributor.authorLi, Jie-Ruen_US
dc.contributor.authorChen, Teng-Mingen_US
dc.contributor.authorLi, Xiulingen_US
dc.contributor.authorShih, Min-Hsiungen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2015-07-21T08:28:00Z-
dc.date.available2015-07-21T08:28:00Z-
dc.date.issued2015-07-01en_US
dc.identifier.issn1077-260Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSTQE.2015.2404877en_US
dc.identifier.urihttp://hdl.handle.net/11536/124430-
dc.description.abstractThis study presents extremely uniform colloidal quantum dot white light-emitting diodes (QD-WLEDs) that demonstrate a high color rendering index (CRI) and correlated color temperatures (CCTs) ranging from 2500 to 4500 K. Experimental results indicate that the structure of the distributed Bragg reflector (DBR) containing a stopband in the UV region enhances the intensity output of both monochromatic QD-LEDs and QD-WLEDs by reflecting the unconverted UV light back onto the package to excite the QDs further. Furthermore, the angular CCT uniformity of the QD-WLEDs also improved considerably because of the dependence of the DBR structure on the incident angle. The angular CCT deviation in the range of -70 degrees to 70 degrees decreased to 39 K and the CRI of the WLED is higher than 90. The high-CRI and uniform angular CCT QD-WLED containing the DBR demonstrates potential applicability as the lighting source of next-generation display devices and solid-state lighting.en_US
dc.language.isoen_USen_US
dc.subjectGaNen_US
dc.subjectlight-emitting diodes (LEDs)en_US
dc.subjectquantum dots (QDs)en_US
dc.titleWide-Range Correlated Color Temperature Light Generation From Resonant Cavity Hybrid Quantum Dot Light-Emitting Diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JSTQE.2015.2404877en_US
dc.identifier.journalIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICSen_US
dc.citation.volume21en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000351754200001en_US
dc.citation.woscount0en_US
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