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dc.contributor.authorTseng, SCen_US
dc.contributor.authorMeng, CCen_US
dc.contributor.authorLi, YHen_US
dc.contributor.authorHuang, GWen_US
dc.date.accessioned2014-12-08T15:17:00Z-
dc.date.available2014-12-08T15:17:00Z-
dc.date.issued2006-04-01en_US
dc.identifier.issn0916-8524en_US
dc.identifier.urihttp://dx.doi.org/10.1093/ietele/e89-c.4.482en_US
dc.identifier.urihttp://hdl.handle.net/11536/12446-
dc.description.abstractThe port-to-port isolation of the micromixer is studied using three different p-type downconversion micromixers in 0.35-mu m CMOS technology. Both the body effect and the well isolation influence the port-to-port isolation significantly. The body effect degrades the LO-to-RF isolation and also deteriorates the LO-to-RF isolation. Without the well isolation, the LO-to-RF isolation drops. However, the RF-to-IF isolation is independent of the body effect and well isolation. The p-type micromixer with a separate N-well and without body effect has the best port-to-port isolation properties; its LO-to-IF, LO-to-RF, and RF-to-IF isolations are -59 dB, -58 dB, and -30 dB, respectively.en_US
dc.language.isoen_USen_US
dc.subjectmicromixeren_US
dc.subjectport-to-port isolationen_US
dc.subjectbody effecten_US
dc.subjectwell isolationen_US
dc.titleThe port-to-port isolation of the downconversion P-type micromixer using different N-well topologiesen_US
dc.typeArticleen_US
dc.identifier.doi10.1093/ietele/e89-c.4.482en_US
dc.identifier.journalIEICE TRANSACTIONS ON ELECTRONICSen_US
dc.citation.volumeE89Cen_US
dc.citation.issue4en_US
dc.citation.spage482en_US
dc.citation.epage487en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000237203600006-
dc.citation.woscount1-
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