標題: Solution processable bilayered gate dielectric towards flexible organic thin film transistors
作者: Singh, Ranjodh
Meena, Jagan Singh
Tsai, I-Hsin
Lin, Yen-Ting
Wang, Cheng-Jyun
Ko, Fu-Hsiang
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: Flexible device;Organic thin film transistor;Gate dielectric;Device performance restore;Solution processing
公開日期: 1-四月-2015
摘要: In this study, we have successfully explored the potential of a new bilayer gate dielectric material, composed of Polystyrene (PS), Pluronic P123 Block Copolymer Surfactant (P123) composite thin film and Polyacrylonitrile (PAN) through fabrication of metal insulator metal (MIM) capacitor devices and organic thin film transistors (OTFTs). The conditions for fabrication of PAN and PS-P123 as a bilayer dielectric material are optimized before employing it further as a gate dielectric in OTFTs. Simple solution processable techniques are applied to deposit PAN and PS-P123 as a bilayer dielectric layer on Polyimide (PI) substrates. Contact angle study is further performed to explore the surface property of this bilayer polymer gate dielectric material. This new bilayer dielectric having a k value of 3.7 intermediate to that of PS-P123 composite thin film dielectric (k similar to 2.8) and PAN dielectric (k similar to 5.5) has successfully acted as a buffer layer by preventing the direct contact between the organic semiconducting layer and high k PAN dielectric. The OTFT devices based on alpha,omega-dihexylquaterthiophene (DH4T) incorporated with this bilayer dielectric, has demonstrated a hole mobility of 1.37 x 10(-2) and on/off current ratio of 10(3) which is one of the good values as reported before. Several bending conditions are applied, to explore the charge carrier hopping mechanism involved in deterioration of electrical properties of these OTFTs. Additionally, the electrical performance of OTFTs, which are exposed to open atmosphere for five days, can be interestingly recovered by means of re-baking them respectively at 90 degrees C. (C) 2015 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.orgel.2015.01.029
http://hdl.handle.net/11536/124488
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2015.01.029
期刊: ORGANIC ELECTRONICS
Volume: 19
起始頁: 120
結束頁: 130
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