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dc.contributor.authorTsuge, Masashien_US
dc.contributor.authorKhriachtchev, Leoniden_US
dc.date.accessioned2015-07-21T08:29:27Z-
dc.date.available2015-07-21T08:29:27Z-
dc.date.issued2015-03-19en_US
dc.identifier.issn1089-5639en_US
dc.identifier.urihttp://dx.doi.org/10.1021/jp509692ben_US
dc.identifier.urihttp://hdl.handle.net/11536/124501-
dc.description.abstractWe have studied hydrogen-atom tunneling in the cis-to-trans conformational change of some carboxylic acid monomers and formic acid (FA) complexes and dimers at the MP2(full) and CCSD(T) levels of theory within the Wentzel-Kramers-Brillouin approximation. The barrier for the minimum energy path, where the OH bond length and the COH bending angle are optimized, is found to be a good approximation for providing the highest barrier transparency. The matrix effect on the transmission coefficients of cis-FA monomer, trans-cis FA dimer (tc1), and cis-acetic acid monomer are modeled by the polarizable continuum model (PCM) at the MP2(full) level of theory in different environments. For the cis-FA monomer and trans-cis FA dimer (tc1), the calculated transmission coefficients agree with the experimental lifetimes observed in noble-gas solids. However, this method cannot reproduce the experimental results obtained for cis-acetic acid. Moreover, the long lifetime of cis-FA and cis-acetic acid in the N-2 environment cannot be reproduced either, which is most probably due to specific interactions that are not included in the PCM. The calculation for cis-HCOOD shows a strong decrease of the barrier transparency compared to that for cis-HCOOH, which is consistent with the experiments. In general, good agreement is observed between the calculated barrier transparency (including PCM) and experimental tunneling rate. However, some exceptions are found, which shows that additional factors influence the tunneling rate.en_US
dc.language.isoen_USen_US
dc.titleTunneling Isomerization of Small Carboxylic Acids and Their Complexes in Solid Matrixes: A Computational Insighten_US
dc.typeArticleen_US
dc.identifier.doi10.1021/jp509692ben_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY Aen_US
dc.citation.volume119en_US
dc.citation.issue11en_US
dc.citation.spage2628en_US
dc.citation.epage2635en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000351557300048en_US
dc.citation.woscount2en_US
Appears in Collections:Articles