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dc.contributor.authorIslamov, D. R.en_US
dc.contributor.authorPerevalov, T. V.en_US
dc.contributor.authorGritsenko, V. A.en_US
dc.contributor.authorCheng, C. H.en_US
dc.contributor.authorChin, A.en_US
dc.date.accessioned2015-07-21T08:29:30Z-
dc.date.available2015-07-21T08:29:30Z-
dc.date.issued2015-03-09en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4914900en_US
dc.identifier.urihttp://hdl.handle.net/11536/124514-
dc.description.abstractIn this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous Hf0.5Zr0.5O2 is phonon-assisted tunneling between traps like in HfO2 and ZrO2. The thermal trap energy of 1.25 eV and optical trap energy of 2.5 eV in Hf0.5Zr0.5O2 were determined based on comparison of experimental data on transport with different theories of charge transfer in dielectrics. A hypothesis that oxygen vacancies are responsible for the charge transport in Hf0.5Zr0.5O2 was discussed. (C) 2015 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleCharge transport in amorphous Hf0.5Zr0.5O2en_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4914900en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume106en_US
dc.citation.issue10en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000351397600046en_US
dc.citation.woscount0en_US
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