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dc.contributor.authorChang, Li-Pinen_US
dc.contributor.authorSu, Yo-Chuanen_US
dc.contributor.authorWu, I-Chenen_US
dc.date.accessioned2015-07-21T08:29:41Z-
dc.date.available2015-07-21T08:29:41Z-
dc.date.issued2015-03-01en_US
dc.identifier.issn1539-9087en_US
dc.identifier.urihttp://dx.doi.org/10.1145/2629455en_US
dc.identifier.urihttp://hdl.handle.net/11536/124525-
dc.description.abstractA promising technique to improve the write performance of solid-state disks (SSDs) is to use a disk write buffer. The goals of a write buffer is not only to reduce the write traffic to the flash chips but also to convert host write patterns into long and sequential write bursts. This study proposes a new buffer design consisting of a replacement policy and a write-back policy. The buffer monitors how the host workload stresses the flash translation layer upon garbage collection. This is used to dynamically adjust its replacement and write-back strategies for a good balance between write sequentiality and write randomness. When the garbage collection overhead is low, the write buffer favors high write sequentiality over low write randomness. When the flash translation layer observes a high overhead of garbage collection, the write buffer favors low write randomness over high write sequentiality. The proposed buffer design outperformed existing approaches by up to 20% under various workloads and flash translation algorithms, as will be shown in experiment results.en_US
dc.language.isoen_USen_US
dc.subjectDesignen_US
dc.subjectPerformanceen_US
dc.subjectAlgorithmen_US
dc.subjectSolid-state disksen_US
dc.subjectflash memoryen_US
dc.subjectwrite bufferingen_US
dc.titlePlugging Versus Logging: Adaptive Buffer Management for Hybrid-Mapping SSDsen_US
dc.typeArticleen_US
dc.identifier.doi10.1145/2629455en_US
dc.identifier.journalACM TRANSACTIONS ON EMBEDDED COMPUTING SYSTEMSen_US
dc.citation.volume14en_US
dc.contributor.department資訊工程學系zh_TW
dc.contributor.departmentDepartment of Computer Scienceen_US
dc.identifier.wosnumberWOS:000352224800010en_US
dc.citation.woscount0en_US
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