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dc.contributor.authorTsai, Szu-Pingen_US
dc.contributor.authorHsu, Heng-Tungen_US
dc.contributor.authorTu, Yung-Yien_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2015-07-21T08:29:41Z-
dc.date.available2015-07-21T08:29:41Z-
dc.date.issued2015-03-01en_US
dc.identifier.issn1882-0778en_US
dc.identifier.urihttp://dx.doi.org/10.7567/APEX.8.034101en_US
dc.identifier.urihttp://hdl.handle.net/11536/124527-
dc.description.abstractThis paper demonstrates, for the first time, the potential of using flip-chip packaging to connect multiple AlGaN/GaN high-electron-mobility transistors (HEMTs) in parallel for application in power electronics. The electrical and thermal properties of both the bare and the packaged devices were experimentally investigated via pulsed current-voltage (I-V) measurements. Compared to the bare die, less than one-fifth the thermal resistance (R-th), triple the output current, and one-third the on-resistance (R-on) with temperature insensibility were observed when three transistors were connected in parallel through flip-chip packaging. Superior performance such as this makes flip-chip packaging a potential technology for high power GaN electronic applications. (C) 2015 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleInvestigation of electrical and thermal properties of multiple AlGaN/GaN high-electron-mobility transistors flip-chip packaged in parallel for power electronicsen_US
dc.typeArticleen_US
dc.identifier.doi10.7567/APEX.8.034101en_US
dc.identifier.journalAPPLIED PHYSICS EXPRESSen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000352220700018en_US
dc.citation.woscount0en_US
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