标题: | Performance Improvements of AlGaN/GaN HEMTs by Strain Modification and Unintentional Carbon Incorporation |
作者: | Tien-Tung Luong Binh Tinh Tran Ho, Yen-Teng Minh-Thien-Huu Ha Hsiao, Yu-Lin Liu, Shih-Chien Chiu, Yu-Sheng Chang, Edward-Yi 材料科学与工程学系 电子工程学系及电子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
关键字: | AlGaN/GaN HEMTs;AN interlayer;strain modification;unitentional carbon incoporation |
公开日期: | 1-三月-2015 |
摘要: | An advanced AlGaN/GaN HEMT structure, grown on a sapphire substrate by MOCVD utilizing a high temperature (HT) AN interlayer (IL) and a multilayer high-low-high temperature (HLH) AN buffer layer, demonstrates a superior performance both in breakdown voltage (>200 V) and maximum drain current (Ipss = 667 mA/mm). The HT AN IL produces an additional compressive strain into the above GaN layer. Accordingly, an AlGaN barrier, grown on the more compressive GaN, introduces less tensile strain leading to an improvement in surface morphology (RMS = 0.19 nm in 2 x 2 mu m(2)), a remarkable increase in 2DEG mobility by 46% (mu(S)= 1900 cm(2)/Vs) and a decrease in densities of defects acting as paths for the leakage current through the AlGaN barrier. A high semi-insulating buffer is achieved by eliminating leakage paths both through the buffer layer and the buffer-substrate interfacial layer. These result from an increase in unintentional carbon introduced by AIN layers, especially by a low temperature AN layer; which are grown under low pressure (50 Ton). Lastly, the decrease in AlGaN barrier tensile strain and low leakage current in the advanced HEMTs structure using an HT AN IL and an HLH AIN buffer are promising for an improvement in AlGaN/GaN HEMTs\' reliability. |
URI: | http://dx.doi.org/10.1007/s13391-014-4219-y http://hdl.handle.net/11536/124528 |
ISSN: | 1738-8090 |
DOI: | 10.1007/s13391-014-4219-y |
期刊: | ELECTRONIC MATERIALS LETTERS |
Volume: | 11 |
起始页: | 217 |
结束页: | 224 |
显示于类别: | Articles |