完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChen, Chihen_US
dc.contributor.authorYu, Dougen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2015-07-21T08:28:38Z-
dc.date.available2015-07-21T08:28:38Z-
dc.date.issued2015-03-01en_US
dc.identifier.issn0883-7694en_US
dc.identifier.urihttp://dx.doi.org/10.1557/mrs.2015.29en_US
dc.identifier.urihttp://hdl.handle.net/11536/124549-
dc.description.abstractWith the electronics packaging industry shifting increasingly to three-dimensional packaging, microbumps have been adopted as the vertical interconnects between chips. Consequently, solder volumes have decreased dramatically, and the solder thickness has reduced to a range between a few and 10 microns. The solder volume of a microbump is approximately two orders of magnitude smaller than a traditional flip-chip joint. In contrast, the thickness of the under-bump metallization (UBM) remains almost the same as that in flip-chip solder joints. Therefore, many issues concerning materials and reliability of microbumps arise. This article reviews the challenges related to microbump materials for vertical interconnects, including transformation of solder joints into intermetallic (IMC) joints, necking or voiding induced by side wetting/diffusion on the circumference of the UBM, formation of porous Cu3Sn IMCs, early electromigration failures caused by specific orientations of Sn grains, and precipitation of plate-like Ag 3 Sn IMCs. An alternative way of fabricating vertical interconnects using direct Cu-to-Cu bonding is also discussed.en_US
dc.language.isoen_USen_US
dc.titleVertical interconnects of microbumps in 3D integrationen_US
dc.typeArticleen_US
dc.identifier.doi10.1557/mrs.2015.29en_US
dc.identifier.journalMRS BULLETINen_US
dc.citation.volume40en_US
dc.citation.spage257en_US
dc.citation.epage262en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000351157100020en_US
dc.citation.woscount0en_US
顯示於類別:期刊論文