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dc.contributor.authorSu, Yin-Hsienen_US
dc.contributor.authorWu, Sze-Annen_US
dc.contributor.authorWu, Chia-Yangen_US
dc.contributor.authorWang, Ying-Langen_US
dc.contributor.authorLee, Wen-Hsien_US
dc.date.accessioned2015-07-21T08:28:43Z-
dc.date.available2015-07-21T08:28:43Z-
dc.date.issued2015-03-01en_US
dc.identifier.issn1530-4388en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TDMR.2014.2386319en_US
dc.identifier.urihttp://hdl.handle.net/11536/124556-
dc.description.abstractThis paper investigates the properties of CuMn/Ru/SiO2. The optimal concentration of Mn in the CuMn alloy as a barrier layer in this structure is determined. The properties of CuMn/Ru/SiO2 are compared to those of CuMn/SiO2 and CuMn/Ta/SiO2. The electrical and material properties of CuMn (010 at.% Mn) alloy films deposited on SiO2, Ta, and Ru are studied. A diffusion barrier layer self-formed at the interface during annealing, and the growth behavior followed a logarithmic rate law. The microstructures of the CuMn films are analyzed using transmission electron microscopy and are correlated with the electrical properties. After thermal treatment, only Cu-5 at.% Mn/SiO2 did not exhibit a diffusion of Cu atoms. After annealing, the thermal stability of films grown on Ru/SiO2 was better than that of films grown on SiO2 and Ta/SiO2. When a Ta or Ru layer was added, the Mn atoms diffused not only to the interface but also to the grain boundaries in the under layer and to the interface between the under layer and SiO2. The tolerance of Mn content increased when the Ru layer was used, and thus, CuMn/Ru prevented the diffusion of Cu after heat treatment at 600 degrees C for 30 min.en_US
dc.language.isoen_USen_US
dc.subjectBarrieren_US
dc.subjectself-formationen_US
dc.subjectannealingen_US
dc.subjectCuMn alloyen_US
dc.subjectTaen_US
dc.subjectRuen_US
dc.titleInvestigation of Barrier Property of Copper Manganese Alloy on Rutheniumen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TDMR.2014.2386319en_US
dc.identifier.journalIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITYen_US
dc.citation.volume15en_US
dc.citation.spage47en_US
dc.citation.epage53en_US
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.identifier.wosnumberWOS:000351141100007en_US
dc.citation.woscount0en_US
Appears in Collections:Articles