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dc.contributor.authorLiu, K. M.en_US
dc.contributor.authorLin, H. I.en_US
dc.contributor.authorUmansky, V.en_US
dc.contributor.authorHsu, S. Y.en_US
dc.date.accessioned2014-12-08T15:17:01Z-
dc.date.available2014-12-08T15:17:01Z-
dc.date.issued2010-02-01en_US
dc.identifier.issn1386-9477en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.physe.2009.11.094en_US
dc.identifier.urihttp://hdl.handle.net/11536/12456-
dc.description.abstractWe have measured the electric transport of double quantum point contacts in series at low temperatures. Two pairs of metal gates are placed longitudinally and sequentially with an edge-to-edge distance of 600 nm. They are used to form two quantum point contacts in a GaAs/Al(x)Ga(1-x)As heterostructure. Isolating from an insulating layer, a top gate is also fabricated on top of the quantum point contacts to modify the electron densities in the quantum point contacts and the two dimensional electron gas as well. The transport is characterized by the direct transmission probability T(d) which represents the portions of electrons travelling ballistically from one quantum point contact to the other. Our results show that the parameter T(d) decreases with decreasing carrier density. The transport is partially adiabatic in high 20 electron densities and transits to completely ohmic regimes in low densities. Because of the correlation between the coherence length and transmission probability, we attribute the result to the reduction of the coherence length and mean free path in the unconstricted electron gas between quantum point contacts. (C) 2010 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectQuantum point contacts in seriesen_US
dc.subjectTransmission probabilityen_US
dc.subjectAdiabatic transporten_US
dc.subjectOhmic transporten_US
dc.titleCarrier density dependent electric transport of serially connected two quantum point contactsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.physe.2009.11.094en_US
dc.identifier.journalPHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURESen_US
dc.citation.volume42en_US
dc.citation.issue4en_US
dc.citation.spage1122en_US
dc.citation.epage1125en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000276541200120-
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