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dc.contributor.authorYu, Yan-Tingen_US
dc.contributor.authorTuan, Pi-Huien_US
dc.contributor.authorChiang, Po-Yien_US
dc.contributor.authorSu, Kuan-Weien_US
dc.contributor.authorHuang, Kai-Fengen_US
dc.contributor.authorChen, Yung-Fuen_US
dc.date.accessioned2015-07-21T08:29:43Z-
dc.date.available2015-07-21T08:29:43Z-
dc.date.issued2015-11-01en_US
dc.identifier.issn1077-260Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSTQE.2015.2414916en_US
dc.identifier.urihttp://hdl.handle.net/11536/124620-
dc.description.abstractThe broad-area rectangular-shaped and stadiumshaped VCSELs with nearly the same aspect ratio are designed to explore the influence of lateral boundary shapes on polarization states and lasing spectra with large detuning by cryogenic cooling. For the rectangular-shaped VCSEL, the lasing modes usually exhibit linearly polarized state and their far-field emissions mainly concentrate on four diagonal directions. On the other hand, the lasing modes of the stadium-shaped VCSEL generally display two orthogonally polarized states and their far-field emissions extensively spread on azimuthal directions. More intriguingly, the lasing spectra of the two devices clearly manifest the features of the energy-level distribution in regular and chaotic quantum billiards, respectively.en_US
dc.language.isoen_USen_US
dc.subjectSemiconductor laseren_US
dc.subjectvertical-cavity surface-emitting lasers (VCELs)en_US
dc.subjectlaser stabilityen_US
dc.subjectoptical polarizationen_US
dc.titleThe Influences of Boundary Shapes on Polarization Characteristics and Lasing Modes in Broad-Area Vertical-Cavity Surface-Emitting Lasers With Cryogenic Detuning: Regular Versus Chaotic Cavitiesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JSTQE.2015.2414916en_US
dc.identifier.journalIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICSen_US
dc.citation.volume21en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000353568600001en_US
dc.citation.woscount0en_US
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