Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Fang, Hau-Wei | en_US |
dc.contributor.author | Hsieh, Tsung-Eong | en_US |
dc.contributor.author | Juang, Jenh-Yih | en_US |
dc.date.accessioned | 2015-07-21T08:29:43Z | - |
dc.date.available | 2015-07-21T08:29:43Z | - |
dc.date.issued | 2015-08-01 | en_US |
dc.identifier.issn | 0169-4332 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.apsusc.2015.03.169 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/124621 | - |
dc.description.abstract | A layer of indium zinc oxide (IZO) was deposited on the n-type Si substrate clad with a thin thermally grown SiOx layer by pulsed laser deposition to form the semiconductor-insulator-semiconductor (SIS) hetero-junction which exhibits substantial photo-induced responses. Investigation on the IZO layer deposited at various temperatures indicated that IZO film grown at 250 degrees C possesses a resistivity of 4.9 x 10(-4) Omega cm with the transmittance exceeding 80% in the wavelength range between near infrared to ultraviolet light. The photodetection device made of the SIS hetero-junction structure was found to exhibit the photoresponse (R) of 35 AW(-1) and 6.15 AW(-1) with a quick photo-response time less than 80 ms under the illumination of visible light and ultraviolet light, respectively. The underlying mechanism for such a unique characteristic was attributed to the suppression of majority carrier tunneling resulted from the Schottky barrier established at the SIS interfaces. (C) 2015 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Photodetector | en_US |
dc.subject | Indium zinc oxide | en_US |
dc.subject | Semiconductor-insulator-semiconductor hetero-junction structure | en_US |
dc.subject | Pulsed laser deposition | en_US |
dc.title | Photo-detection characteristics of In-Zn-O/SiOx/n-Si hetero-junctions | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.apsusc.2015.03.169 | en_US |
dc.identifier.journal | APPLIED SURFACE SCIENCE | en_US |
dc.citation.volume | 345 | en_US |
dc.citation.spage | 295 | en_US |
dc.citation.epage | 300 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000353803000038 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Articles |