完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChen, Kai-Huangen_US
dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorLiao, Kuo-Hsiaoen_US
dc.contributor.authorSyu, Yong-Enen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2015-07-21T08:29:45Z-
dc.date.available2015-07-21T08:29:45Z-
dc.date.issued2015-06-01en_US
dc.identifier.issn0947-8396en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s00339-015-9144-xen_US
dc.identifier.urihttp://hdl.handle.net/11536/124627-
dc.description.abstractBipolar switching properties and electrical conduction mechanism in Sn:SiO (X) thin-film RRAM devices were investigated and discussed. To complete the resistive switching properties of the stannum doped into silicon oxide thin films, the RTA-treated Sn:SiO (X) thin-film RRAM devices were investigated and discussed. In addition, the improvement qualities and electrical switching properties of the RTA-treated Sn:SiO (X) thin-film RRAM devices were carried out XPS, FT-IR, and IV measurement. The ohmic conduction with metal-like behavior and hopping conduction dependent activation energy properties by the Arrhenius plot equation in LRS of the Sn:SiO (X) thin films was investigated. The activation energy and hopping distance for the RTA-treated thin films were found to be 0.018 eV and 1.1 nm, respectively. For the compatibility with the IC processes, the RTA treatment was a promising method for the Sn:SiO (X) thin-film RRAM nonvolatile memory applications.en_US
dc.language.isoen_USen_US
dc.titleHopping conduction properties of the Sn:SiO (X) thin-film resistance random access memory devices induced by rapid temperature annealing procedureen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s00339-015-9144-xen_US
dc.identifier.journalAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSINGen_US
dc.citation.volume119en_US
dc.citation.spage1609en_US
dc.citation.epage1613en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000354187100050en_US
dc.citation.woscount0en_US
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