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dc.contributor.authorKleftogiannis, Ioannisen_US
dc.contributor.authorTang, Chi-Shungen_US
dc.contributor.authorCheng, Shun-Jenen_US
dc.date.accessioned2015-07-21T08:29:48Z-
dc.date.available2015-07-21T08:29:48Z-
dc.date.issued2015-05-27en_US
dc.identifier.issn0953-8984en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0953-8984/27/20/205302en_US
dc.identifier.urihttp://hdl.handle.net/11536/124639-
dc.description.abstractWe investigate the quantum transport properties of multichannel nanoribbons made of materials described by the Dirac equation, under an in-plane magnetic field. In the low energy regime, positive and negative finger-gate potentials allow the electrons to make intra-subband transitions via hole-like or electron-like quasibound states (QBS), respectively, resulting in dips in the conductance. In the high energy regime, double dip structures in the conductance are found, attributed to spin-flip or spin-nonflip inter-subband transitions through the QBSs. Inverting the finger-gate polarity offers the possibility to manipulate the spin polarized electronic transport to achieve a controlled spin-switch.en_US
dc.language.isoen_USen_US
dc.subjectquantum transporten_US
dc.subjectDirac materialsen_US
dc.subjectevanescent scatteringen_US
dc.titleFinger-gate manipulated quantum transport in Dirac materialsen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0953-8984/27/20/205302en_US
dc.identifier.journalJOURNAL OF PHYSICS-CONDENSED MATTERen_US
dc.citation.volume27en_US
dc.citation.issue20en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000354070400007en_US
dc.citation.woscount0en_US
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