Low-temperature growth mechanism of SW-NTs networks by buffer layer-assisted MPCVD

Abstract

We present the microstructures and growth mechanism of networks of single-walled carbon nanotubes (SWNTs) fabricated by buffer layer-assisted microwave plasma chemical vapor deposition (MPCVD) at relatively low temperatures. The morphologies and bonding structures of carbon nanostructures were characterized by field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), and Raman Spectroscopy. Additionally, the surface roughness of buffer layer and its bonding structures with catalyst atom are analyzed by atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS), respectively. Analytical results demonstrate that networks of CNTs are formed by bundles or individual SWNTs. We suggest that the formation of SWNTs networks at low temperature may follow the root-growth mechanism. The differences comparing with previous growth mechanism are that the nuclei formation resulted from the rough surface of the buffer layer, and dissolution of carbon in catalyst will be enhanced due to the surface diffusion of the buffer layer. These unique effects from the buffer layer can provide favorable conditions to grow SWNTs at relatively low process temperatures. (c) 2005 Elsevier B.V. All rights reserved.