Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wang, Yu-Ting | en_US |
dc.contributor.author | Chen, Mei-Hsin | en_US |
dc.contributor.author | Lin, Chao-Ting | en_US |
dc.contributor.author | Fang, Jian-Jhih | en_US |
dc.contributor.author | Chang, Che-Jui | en_US |
dc.contributor.author | Luo, Chih-Wei | en_US |
dc.contributor.author | Yabushita, Atsushi | en_US |
dc.contributor.author | Wu, Kaung-Hsiung | en_US |
dc.contributor.author | Kobayashi, Takayoshi | en_US |
dc.date.accessioned | 2015-07-21T08:28:46Z | - |
dc.date.available | 2015-07-21T08:28:46Z | - |
dc.date.issued | 2015-03-04 | en_US |
dc.identifier.issn | 1944-8244 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1021/am508091u | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/124712 | - |
dc.description.abstract | The organic solar cells of heterojunction system, ITO/PEDOT:PSS/P3HT:PCBM/Al, with a thermal annealing after deposition of Al exhibit better performance than those with an annealing process before deposition of Al. In this study, ultrafast time-resolved spectroscopy is employed to reveal the underlying mechanism of annealing effects on the performance of P3HT:PCBM solar cell devices. The analyses of all decomposed relaxation processes show that the postannealed devices exhibit an increase in charge transfer, in the number of separated polarons and a reduction in the amount of recombination between excited carriers. Moreover, the longer lifetime for the excited carriers in postannealed devices indicates it is more likely to be dissociated into photocarriers and result in a larger value for photocurrent, which demonstrates the physical mechanism for increased device performance. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | organic solar cells | en_US |
dc.subject | ultrafast dynamics | en_US |
dc.subject | annealing effect | en_US |
dc.title | Use of Ultrafast Time-Resolved Spectroscopy to Demonstrate the Effect of Annealing on the Performance of P3HT:PCBM Solar Cells | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1021/am508091u | en_US |
dc.identifier.journal | ACS APPLIED MATERIALS & INTERFACES | en_US |
dc.citation.spage | 4457 | en_US |
dc.citation.epage | 4462 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000353005300001 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Articles |