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dc.contributor.authorWang, Yu-Tingen_US
dc.contributor.authorChen, Mei-Hsinen_US
dc.contributor.authorLin, Chao-Tingen_US
dc.contributor.authorFang, Jian-Jhihen_US
dc.contributor.authorChang, Che-Juien_US
dc.contributor.authorLuo, Chih-Weien_US
dc.contributor.authorYabushita, Atsushien_US
dc.contributor.authorWu, Kaung-Hsiungen_US
dc.contributor.authorKobayashi, Takayoshien_US
dc.date.accessioned2015-07-21T08:28:46Z-
dc.date.available2015-07-21T08:28:46Z-
dc.date.issued2015-03-04en_US
dc.identifier.issn1944-8244en_US
dc.identifier.urihttp://dx.doi.org/10.1021/am508091uen_US
dc.identifier.urihttp://hdl.handle.net/11536/124712-
dc.description.abstractThe organic solar cells of heterojunction system, ITO/PEDOT:PSS/P3HT:PCBM/Al, with a thermal annealing after deposition of Al exhibit better performance than those with an annealing process before deposition of Al. In this study, ultrafast time-resolved spectroscopy is employed to reveal the underlying mechanism of annealing effects on the performance of P3HT:PCBM solar cell devices. The analyses of all decomposed relaxation processes show that the postannealed devices exhibit an increase in charge transfer, in the number of separated polarons and a reduction in the amount of recombination between excited carriers. Moreover, the longer lifetime for the excited carriers in postannealed devices indicates it is more likely to be dissociated into photocarriers and result in a larger value for photocurrent, which demonstrates the physical mechanism for increased device performance.en_US
dc.language.isoen_USen_US
dc.subjectorganic solar cellsen_US
dc.subjectultrafast dynamicsen_US
dc.subjectannealing effecten_US
dc.titleUse of Ultrafast Time-Resolved Spectroscopy to Demonstrate the Effect of Annealing on the Performance of P3HT:PCBM Solar Cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/am508091uen_US
dc.identifier.journalACS APPLIED MATERIALS & INTERFACESen_US
dc.citation.spage4457en_US
dc.citation.epage4462en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000353005300001en_US
dc.citation.woscount0en_US
Appears in Collections:Articles