完整後設資料紀錄
DC 欄位語言
dc.contributor.authorYan, Li-Pingen_US
dc.contributor.authorKurosawa, Masahiroen_US
dc.contributor.authorHsu, Wei-Tingen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorAdachi, Satoruen_US
dc.date.accessioned2015-07-21T08:29:04Z-
dc.date.available2015-07-21T08:29:04Z-
dc.date.issued2015-03-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.7567/JJAP.54.033003en_US
dc.identifier.urihttp://hdl.handle.net/11536/124714-
dc.description.abstractLongitudinal and in-plane electron g-factors, and a nuclear spin polarization (NSP) have been evaluated precisely in a CdTe/Cd0.85Mg0.15Te single quantum well by using the time-resolved Kerr rotation and double lock-in detection techniques. Resident electron spin polarization (RESP) was formed via the negative trion formation and recombination, and RESP gave rise to NSP in an oblique magnetic field configuration. We observed the effective nuclear field of a few mT which was weak compared with that in III-V semiconductor nanostructures as expected, but the nuclear field can be converted to the maximal NSP of 12% in Faraday geometry. (C) 2015 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleOptical detection of anisotropic g-factor and nuclear spin polarization in a single CdTe quantum wellen_US
dc.typeArticleen_US
dc.identifier.doi10.7567/JJAP.54.033003en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume54en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000352792200047en_US
dc.citation.woscount0en_US
顯示於類別:期刊論文