完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wang, YC | en_US |
dc.contributor.author | Pan, CL | en_US |
dc.contributor.author | Shieh, JM | en_US |
dc.contributor.author | Dai, BT | en_US |
dc.date.accessioned | 2014-12-08T15:17:03Z | - |
dc.date.available | 2014-12-08T15:17:03Z | - |
dc.date.issued | 2006-03-27 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.2191095 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/12474 | - |
dc.description.abstract | Femtosecond laser annealing (FLA) was employed for activation of phosphorus (P)- and boron (B)-implanted silicons with negligible dopant diffusion. Preamorphizing implantation is not required. We found that the dopant profiles in FLA-activated samples essentially duplicate those of as-implanted ones even for junctions as deep as 100 nm below the surface. The measured sheet resistances and activation efficiencies of P- and B-implanted samples were in the range of 100-400 Omega/square and 28%-35%, respectively. Moreover, thermal-energy-assisted dopant diffusion by heating was observed for substrate temperature as low as 100 degrees C. The shallow activated-depth feature associated with FLA reduces the separation between end-of-range defects and high-concentration portion of dopants. This generates a steep interstitial gradient responsible for observed B and P uphill diffusions at a depth of about 60 nm below the surface. (c) 2006 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Dopant profile engineering by near-infrared femtosecond laser activation | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.2191095 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 88 | en_US |
dc.citation.issue | 13 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000236465100004 | - |
dc.citation.woscount | 6 | - |
顯示於類別: | 期刊論文 |