標題: | Structural, optical, and photoluminescence study of ZnO/IGZO thin film for thin film transistor application |
作者: | Tiwari, Nidhi Shieh, Han-Ping D. Liu, Po-Tsun 光電工程學系 顯示科技研究所 Department of Photonics Institute of Display |
關鍵字: | Sputtering;Semiconductor;Thin films |
公開日期: | 15-七月-2015 |
摘要: | Highly transparent and c-axis oriented zinc oxide (ZnO)/indium gallium zinc oxide (IGZO) thin films have been fabricated by R.F. sputtering. The effect of annealing on physical properties of the films was investigated and compared with a-IGZO thin films. The films are wurtzite-type hexagonal structure similar to ZnO with [0 0 0 2] preferred direction and exhibit less density of defects. The TFTs fabricated with ZnO/IGZO films after annealing at 450 degrees C reveal smaller sub-threshold swing (SS similar to 0.52 V/dec) and threshold voltage (Vth similar to 1.3 V) than the TFTs (SS similar to 0.82 V/dec, Vth similar to 13.3 V) of a-IGZO thin film annealed at the same temperature. (C) 2015 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.matlet.2015.03.043 http://hdl.handle.net/11536/124757 |
ISSN: | 0167-577X |
DOI: | 10.1016/j.matlet.2015.03.043 |
期刊: | MATERIALS LETTERS |
Volume: | 151 |
起始頁: | 53 |
結束頁: | 56 |
顯示於類別: | 期刊論文 |