標題: Structural, optical, and photoluminescence study of ZnO/IGZO thin film for thin film transistor application
作者: Tiwari, Nidhi
Shieh, Han-Ping D.
Liu, Po-Tsun
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: Sputtering;Semiconductor;Thin films
公開日期: 15-七月-2015
摘要: Highly transparent and c-axis oriented zinc oxide (ZnO)/indium gallium zinc oxide (IGZO) thin films have been fabricated by R.F. sputtering. The effect of annealing on physical properties of the films was investigated and compared with a-IGZO thin films. The films are wurtzite-type hexagonal structure similar to ZnO with [0 0 0 2] preferred direction and exhibit less density of defects. The TFTs fabricated with ZnO/IGZO films after annealing at 450 degrees C reveal smaller sub-threshold swing (SS similar to 0.52 V/dec) and threshold voltage (Vth similar to 1.3 V) than the TFTs (SS similar to 0.82 V/dec, Vth similar to 13.3 V) of a-IGZO thin film annealed at the same temperature. (C) 2015 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.matlet.2015.03.043
http://hdl.handle.net/11536/124757
ISSN: 0167-577X
DOI: 10.1016/j.matlet.2015.03.043
期刊: MATERIALS LETTERS
Volume: 151
起始頁: 53
結束頁: 56
顯示於類別:期刊論文