Structural, optical, and photoluminescence study of ZnO/IGZO thin film for thin film transistor application

Abstract

Highly transparent and c-axis oriented zinc oxide (ZnO)/indium gallium zinc oxide (IGZO) thin films have been fabricated by R.F. sputtering. The effect of annealing on physical properties of the films was investigated and compared with a-IGZO thin films. The films are wurtzite-type hexagonal structure similar to ZnO with [0 0 0 2] preferred direction and exhibit less density of defects. The TFTs fabricated with ZnO/IGZO films after annealing at 450 degrees C reveal smaller sub-threshold swing (SS similar to 0.52 V/dec) and threshold voltage (Vth similar to 1.3 V) than the TFTs (SS similar to 0.82 V/dec, Vth similar to 13.3 V) of a-IGZO thin film annealed at the same temperature. (C) 2015 Elsevier B.V. All rights reserved.