標題: Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-Assist
作者: Hu, Vita Pi-Ho
Fan, Ming-Long
Su, Pin
Chuang, Ching-Te
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: GeOI FinFET;read-assist;SRAM;static noise margin;write-assist
公開日期: 1-Jun-2015
摘要: This paper analyzes the impacts of read-assist and write-assist circuits on GeOI FinFET 6T SRAM cells considering intrinsic random variations, process corner, and temperature variation. The word-line under-drive (WLUD) read-assist is more efficient to improve the read static noise margin and read V-MIN of fast-N slow-P corner GeOI FinFET SRAM cells compared with the Silicon-On-Insulator (SOI) counterparts. GeOI FinFET SRAM cells with WLUD show less cell read access-time degradation compared with the SOI counterparts at both 25 degrees C and 125 degrees C. With transient voltage collapse (TVC) write-assist, the write-ability and variation tolerance of GeOI and SOI FinFET SRAM cells are improved. The temperature dependence of data retention time is different between the GeOI and SOI FinFET SRAM cells. The maximum TVC write-assist pulsewidth constrained by the data retention failure is smaller in GeOI FinFET SRAMs at 25 degrees C and becomes comparable at 125 degrees C compared with the SOI FinFET SRAMs.
URI: http://dx.doi.org/10.1109/TED.2015.2412973
http://hdl.handle.net/11536/124779
ISSN: 0018-9383
DOI: 10.1109/TED.2015.2412973
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 62
起始頁: 1710
結束頁: 1715
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