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dc.contributor.authorZhong, Yan-Kaien_US
dc.contributor.authorFu, Sze-Mingen_US
dc.contributor.authorJu, Nyan Pingen_US
dc.contributor.authorLin, Alberten_US
dc.date.accessioned2015-07-21T08:28:10Z-
dc.date.available2015-07-21T08:28:10Z-
dc.date.issued2015-06-01en_US
dc.identifier.issn0740-3224en_US
dc.identifier.urihttp://dx.doi.org/10.1364/JOSAB.32.001252en_US
dc.identifier.urihttp://hdl.handle.net/11536/124780-
dc.description.abstractIn this work, a shape-optimized periodic pattern design is employed to boost the short circuit current of solar cells. A decent result of an additional 16.1% enhancement in short circuit current is achieved by solely pattern-wise optimization, compared to the baseline structure that is already under full parameter optimization. The underlying physics is that the shape-optimized pattern leads to optimal quasi-guided mode excitations. As a result of the pattern design, a single strongly confined quasi-guided mode is replaced with several weakly confined modes, to cover a broader spectral range. Previous works of optimized periodic gratings result in gradually varied grating heights and require grayscale lithography leading to high process complexity. Using randomized pattern for isotropic Lambertian light trapping, on the other hand, leads to an overly large simulation domain. The proposed pattern design methodology achieves the optimal balance between the slow-light enhancement strength and the enhancement spectral range for nanophotonic light trapping using quasi-guided modes. (C) 2015 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleToward ultimate nanophotonic light trapping using pattern-designed quasi-guided mode excitationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/JOSAB.32.001252en_US
dc.identifier.journalJOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICSen_US
dc.citation.volume32en_US
dc.citation.spage1252en_US
dc.citation.epage1258en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000355632200033en_US
dc.citation.woscount0en_US
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