Properties of photoluminescence in type-II ZnTe/ZnSe quantum dots

doi:10.1063/1.2189029

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, TY	en_US
dc.contributor.author	Lyu, DY	en_US
dc.contributor.author	Chang, J	en_US
dc.contributor.author	Shen, JL	en_US
dc.contributor.author	Chou, WC	en_US
dc.date.accessioned	2014-12-08T15:17:04Z	-
dc.date.available	2014-12-08T15:17:04Z	-
dc.date.issued	2006-03-20	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.2189029	en_US
dc.identifier.uri	http://hdl.handle.net/11536/12478	-
dc.description.abstract	Temperature and time evolution of the photoluminescence (PL) intensity of bimodal ZnTe/ZnSe type-II quantum dots (QDs) were investigated. A particular temperature dependence of PL was observed in large QDs. PL decay of small QDs is composed of a faster initial component and a slower tail component whereas PL decay of large QDs simply comprises a fast component. All phenomena could be understood consistently by considering charge carrier transfer mechanism, band-bending effect, and the existence of nonradiative centers in the bimodal type-II QD array. We show that excitons play an important role in the emission properties of a self-assembled type-II QD system.	en_US
dc.language.iso	en_US	en_US
dc.title	Properties of photoluminescence in type-II ZnTe/ZnSe quantum dots	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.2189029	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	88	en_US
dc.citation.issue	12	en_US
dc.citation.epage		en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000236250100049	-
dc.citation.woscount	8	-
顯示於類別：	期刊論文

文件中的檔案：

000236250100049.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。