標題: | Design of multifold Ge/Si/Ge composite quantum-dot heterostructures for visible to near-infrared photodetection |
作者: | Kuo, Ming-Hao Lai, Wei-Ting Lee, Sheng-Wei Chen, Yen-Chun Chang, Chia-Wei Chang, Wen-Hao Hsu, Tzu-Min Li, Pei-Wen 電子物理學系 電子工程學系及電子研究所 Department of Electrophysics Department of Electronics Engineering and Institute of Electronics |
公開日期: | 15-五月-2015 |
摘要: | We demonstrate an effective approach to grow high-quality thin film (>1 mu m) ofmultifold Ge/Si/Ge composite quantum dots ( CQDs) stacked heterostructures for near infrared photodetection and optical interconnect applications. An otherwise random, self-assembly of variable-fold Ge/Si CQDs has been grown on Si through the insertion of Si spacer layers to produce micron-scale-thick, stacked Ge/Si CQD layers with desired QD morphology and composition distribution. The high crystalline quality of these multifold Ge CQD heterostructures is evidenced by low dark current density of 3.68 pA/mu m(2), superior photoresponsivity of 267 and 220 mA/W under 850 and 980 nm illumination, respectively, and very fast temporal response time of 0.24 ns measured on the Ge/Si CQD photodetectors. (C) 2015 Optical Society of America |
URI: | http://dx.doi.org/10.1364/OL.40.002401 http://hdl.handle.net/11536/124810 |
ISSN: | 0146-9592 |
DOI: | 10.1364/OL.40.002401 |
期刊: | OPTICS LETTERS |
Volume: | 40 |
Issue: | 10 |
起始頁: | 2401 |
結束頁: | 2404 |
顯示於類別: | 期刊論文 |