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dc.contributor.authorKuo, Ming-Haoen_US
dc.contributor.authorLai, Wei-Tingen_US
dc.contributor.authorLee, Sheng-Weien_US
dc.contributor.authorChen, Yen-Chunen_US
dc.contributor.authorChang, Chia-Weien_US
dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorHsu, Tzu-Minen_US
dc.contributor.authorLi, Pei-Wenen_US
dc.date.accessioned2015-07-21T08:29:32Z-
dc.date.available2015-07-21T08:29:32Z-
dc.date.issued2015-05-15en_US
dc.identifier.issn0146-9592en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OL.40.002401en_US
dc.identifier.urihttp://hdl.handle.net/11536/124810-
dc.description.abstractWe demonstrate an effective approach to grow high-quality thin film (>1 mu m) ofmultifold Ge/Si/Ge composite quantum dots ( CQDs) stacked heterostructures for near infrared photodetection and optical interconnect applications. An otherwise random, self-assembly of variable-fold Ge/Si CQDs has been grown on Si through the insertion of Si spacer layers to produce micron-scale-thick, stacked Ge/Si CQD layers with desired QD morphology and composition distribution. The high crystalline quality of these multifold Ge CQD heterostructures is evidenced by low dark current density of 3.68 pA/mu m(2), superior photoresponsivity of 267 and 220 mA/W under 850 and 980 nm illumination, respectively, and very fast temporal response time of 0.24 ns measured on the Ge/Si CQD photodetectors. (C) 2015 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleDesign of multifold Ge/Si/Ge composite quantum-dot heterostructures for visible to near-infrared photodetectionen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OL.40.002401en_US
dc.identifier.journalOPTICS LETTERSen_US
dc.citation.volume40en_US
dc.citation.issue10en_US
dc.citation.spage2401en_US
dc.citation.epage2404en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000354708300063en_US
dc.citation.woscount0en_US
Appears in Collections:Articles