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dc.contributor.authorLi, Yun-Jingen_US
dc.contributor.authorChang, Jet-Rungen_US
dc.contributor.authorChang, Shih-Pangen_US
dc.contributor.authorSou, Kuok-Panen_US
dc.contributor.authorCheng, Yuh-Jenen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2015-07-21T08:29:19Z-
dc.date.available2015-07-21T08:29:19Z-
dc.date.issued2015-04-01en_US
dc.identifier.issn1882-0778en_US
dc.identifier.urihttp://dx.doi.org/10.7567/APEX.8.042101en_US
dc.identifier.urihttp://hdl.handle.net/11536/124845-
dc.description.abstractWe report the study of an electrically driven nanopyramid-on-pillar green light-emitting diode (LED). The pyramid-on-pillar nanostructure was fabricated by top-down etching from a GaN template, followed by epitaxial regrowth. High-In-content InGaN/GaN multiple quantum wells (MQWs) were grown on semipolar pyramid and nonpolar pillar surfaces. The measured radiative lifetimes of MQWs on these two surfaces were 2 orders of magnitude shorter than that of a conventional c-plane (0001) MQW owing to their lower polarization field. Electrical injection performance was also demonstrated and discussed. (C) 2015 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleInGaN/GaN multiple-quantum-well nanopyramid-on-pillar light-emitting diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.7567/APEX.8.042101en_US
dc.identifier.journalAPPLIED PHYSICS EXPRESSen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000354696900007en_US
dc.citation.woscount0en_US
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