完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChang, Hsiu-Chengen_US
dc.contributor.authorChen, Tsung-Hanen_US
dc.contributor.authorWhang, Wha-Tzongen_US
dc.contributor.authorChen, Chun-Huaen_US
dc.date.accessioned2015-07-21T08:28:49Z-
dc.date.available2015-07-21T08:28:49Z-
dc.date.issued2015-01-01en_US
dc.identifier.issn2050-7488en_US
dc.identifier.urihttp://dx.doi.org/10.1039/c5ta00911aen_US
dc.identifier.urihttp://hdl.handle.net/11536/124863-
dc.description.abstractWe describe a facile and one-step pulsed laser deposition (PLD) technique that was utilized for the first time to systematically fabricate a series of innovative Bi2Te3 superassembly-on-epitaxy bi-layer nanostructures, by uniquely coupling the upper self-assembled well-ordered Bi2Te3 hierarchical nanostructures with unusually high surface-and interface-to-volume ratios and a highly electrical conductive epitaxial bottom thin layer on insulated SiO2/Si substrates, as an emerging new class of the most advanced thermoelectric nanomaterials. The optimized power factor of the present superassembly-on-epitaxy films is one to three orders of magnitude higher than that of most Bi2Te3 nanoassemblies defined as the assemblies of nanocrystals, evidently proving the significance and potential of the present new concept and the resulting thermoelectric nanomaterials.en_US
dc.language.isoen_USen_US
dc.titleSuperassembling of Bi2Te3 hierarchical nanostructures for enhanced thermoelectric performanceen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c5ta00911aen_US
dc.identifier.journalJOURNAL OF MATERIALS CHEMISTRY Aen_US
dc.citation.issue19en_US
dc.citation.spage10459en_US
dc.citation.epage10465en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000354204500042en_US
dc.citation.woscount0en_US
顯示於類別:期刊論文