標題: | Chemical vapour deposition growth of graphene layers on metal substrates |
作者: | Lai, Y-C Yu, S-C Rafailov, P. M. Vlaikova, E. Valkov, S. Petrov, S. Koprinarova, J. Terziyska, P. Marinova, V. Lin, S. H. Yu, P. Chi, G. C. Dimitrov, D. Gospodinov, M. M. 光電工程學系 Department of Photonics |
公開日期: | 1-一月-2014 |
摘要: | Graphene layers were grown by chemical vapour deposition (CVD) on Si wafers covered by a SiO2 substrate layer and a Ni interlayer, and on copper and nickel foil. The obtained graphene layers were characterized by Raman spectroscopy. The films grown on SiO2/Ni substrate and Ni foil comprise mainly multilayer defect-rich graphene, while those on Cu foil exhibit the spectroscopic fingerprint of relatively defect-free single-layer graphene due to the low carbon solubility in copper and the suitably chosen substrate position in a quasi-closed volume. Optimal growth conditions and the nature of defects in the layers are discussed. |
URI: | http://dx.doi.org/10.1088/1742-6596/558/1/012059 http://hdl.handle.net/11536/124890 |
ISSN: | 1742-6588 |
DOI: | 10.1088/1742-6596/558/1/012059 |
期刊: | 18TH INTERNATIONAL SCHOOL ON CONDENSED MATTER PHYSICS: CHALLENGES OF NANOSCALE SCIENCE: THEORY, MATERIALS, APPLICATIONS |
Volume: | 558 |
顯示於類別: | 會議論文 |